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Low VF Schottky Bridge Rectifiers
COMCHIP
SMD DIODE SPECIALIST
CDBHD120L-G Thru 1100L-G
Reverse Voltage: 20 - 100 Volts Forward Current: 1.0 Amp
* Low Vf Schottky barrier chips in bridge * Metal-Semiconductor junction with guard ring * High surge current capability * Silicon epitaxial planar chips * For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications * Lead-free part, meet RoHS requirements
+
~
Features
-
Mini-DIP
.106(2.7) .090(2.3)
~
C .02(0.5) .043(1.1) .027(0.7)
~ +
~ -
.031(0.8) .019(0.5)
.165(4.2) .150(3.8)
.275(7.0) Max.
Mechanical Data
* Case: Mini-Dip bridge (TO-269AA) plastic molded case * Epoxy: UL94-V0 rated flame retardant * Terminals: Solderable per MIL-STD-750 Method 2026 * Polarity: As marked on body * Mounting Position: Any * Weight: 0.0078 ounces, 0.22 grams
.193(4.90) .177(4.50)
.067(1.7) .057(1.3)
.016(0.41) .006(0.15) .051(1.3) .035(0.9)
.106(2.7) .090(2.3) .008(0.2) Max.
.114(2.90) .094(2.40)
Unit :inch(mm)
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25C ambient temperature unless otherwise specified
CDBHD - Symbols Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current 0.2x0.2" (5.0x5.0mm) copper pad area, see Figure 1 Peak Forward Surge Current
8.3mS single half sine-wave superimp osed on rated load (JEDEC Me thod)
120L 20 14 20
140L 40 28 40
160L 60 42 60
180L 80 56 80
1100L 100 70 100
Units Volts Volts Volts
VRRM VRMS VDC
IAV
1.0
Amps
IFSM
VF
IR
30.0 0.44 0.625 0.5 20.0
250 125
Amps 0.75
Volts
mA
Maximum Forward Voltage at 1.0A (Note 1) Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Junction Temperature Range Storage Temperature Range
: Note 1. Pulse test: 300S pu lse wi dth, 1% du ty cy cle
TA= 25C TA= 100C
CJ RJA RJL TJ TSTG
pF
85.0 20.0 -55 ~ +125 -55 ~ +150
C/W C C
2. Me asured at 1.0MH z an d ap plied reverse vo ltage of 4.0 Volts 3. Therma l resistance from junction to am bient and from junction to lead P.C.B. mo unted on 0. 2x0.2"(5.0x5.0mm ) co pper pa d ar eas.
Page 1
MDS0702004A
Low VF Schottky Bridge Rectifiers
Fig.1 - Forward Current Derating Curve Peak Forward Surge Current (A) Average Forward Current (A)
1.2 1.0 0.8 0.6 0.4 0.2
CDBHD120L-G - 160L-G CDBHD180L-G - 1100L-G single phase half wave 60Hz resistive or inductive load 3.75"(9.5mm) lead length
COMCHIP
SMD DIODE SPECIALIST
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
100
10
TL=110C 8.3mS single half sine-wave (JEDEC Method)
1 1 10 100
0
25
50
75
100
125
150
175
Lead Temperature ( C)
Number of Cycles at 60 Hz
10
Instantaneous Reverse Current (mA)
Fig. 3 - Typical Instantaneour Forward Characteristics Instantaneous Forward Current (A)
pulse width =300S 1% duty cycle, Tj=25C
Fig. 4A - Typical Reverse Characteristics
100
CDBHD120L-G - 160L-G
10 TJ=125C 1.0 TJ=75C 0.1
1.0
CDBHD120L-G - 140L-G
0.1
CDBHD160L-G
0.01
TJ=25C
CDBHD180L-G - 1100L-G
0.01 0
0.2
0.4
0.6
0.8
1.0
0.001 0
20
40
60
80
100
120
140
Instantaneous Forward Voltage (Volts)
Percent of Rated Peak Reverse Voltage ( %)
Fig. 5 - Typical Junction Capacitance
1000
Fig. 4B - Typeical Reverse Characteristic Instantaneous Reverse Current (A)
1000
CDBHD180L-G - 1100L-G
TJ=25C f=1.0MHz
Junction Capacitance (pF)
100
TJ=150C TJ=125C
CDBHD120L-G - 140L-G
10 1.0 TJ=100C
100
CDBHD160L-G CDBHD180L-G - 1100L-G
0.1 TJ=25C 0.01 0 20 40 60 80 100
10 0.1
1.0
10
100
Reverse Voltage (Volts)
MDS0702004A
Percent of Rated Peak Reverse Voltage ( %)
Page 2

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